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POLY-SILICON
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Home > Products & Applications >POLYSILICON INGOT FURNACE
TC500 INGOT FURNACE
1. Technical features:
High-quality hearth insulating materials (carbon felts) and highly-airtight hearth, provide outstanding conditions for the production of polysilicon.
High-performance heating system, ensures homogeneity and consistency of silicon materials in the crystallizing process.
The system adopts 1600℃ ceramic fiber + graphite soft felt double-layer safety protection design in combination with automatic silicon leakage sensing system to activate emergency measures for silicon leakage. It leverages outstanding safety protection to minimize potential accidents.
The vacuum system adopts 3-pump design and the small pump maintains operation in the growth period, thus substantially reducing energy consumption for the vacuum system.
Computerized fully automatic control in the technical process in combination with visual display, makes operation a simple job.
Advanced polysilicon directional solidification technology.
Heat-insulating cage synchronous lifting technology, ensures proper temperature gradient in the vertical direction and solid-liquid interface in the horizontal direction.
Thermal-field design for temperature gradient in the vertical direction help speed up polysilicon growth.
2. Model and specifications:
 
Model
TC500
TC650
Equipment size (mm)
L3700×W3900×H4200
L3700×W3900×H4200
Silicon ingot size (mm)
480kg: 840×840×300
650kg: 1000×1000×280    
Silicon ingot weight (kg)
420-480
650-700
Production cycle (hr)
52-56
60-63
Power distribution
AC 380±10% V 50Hz,200kVA, 3-phase 5 wires.
AC 380±10% V 50Hz, 200KVA, 3-phase 5 wires..
Heating power (kw)
165
165
Energy consumption per furnace per time (kW.hr)
<2980(430kg)
<4100(680kg)
Maximum temperature ℃
1600
1600
Maximum working temperature(℃)
1590
1590
Vacuum system
Mechanical pump + roots pump
Mechanical pump + roots pump
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